| PART |
Description |
Maker |
| IRS26310DJPBF-15 |
HIGH VOLTAGE 3 PHASE GATE DRIVER IC WITH DC BUS OVER ?VOLTAGE PROTECTION
|
International Rectifier
|
| IRS23364D IRS23364DJPBF IRS23364DJTRPBF IRS23364DP |
HIGH VOLTAGE 3 PHASE GATE DRIVER IC
|
International Rectifier
|
| IRSM505-065-15 |
500V 3-phase inverter including high voltage gate drivers
|
International Rectifier
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| IW4011B IW4011BD IW4011BN |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
INTEGRAL
|
| IW4025BD IW4025BN |
Triple 3-input NOR gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| KK4081B KK4081BD KK4081BN |
Quad 2-Input AND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| FAN7081MXGF085 FAN7081GF085 FAN7081MGF085 |
The FAN7081_GF085 is a high-side gate drive IC designed for high voltage and high speed driving of MOSFET or IGBT, which operate up to 600V.
|
Fairchild Semiconductor
|
| LTC4440-5-15 |
High Speed, High Voltage, High Side Gate Driver
|
Linear Technology
|
| ISL8107IRZ-T |
Single-Phase Pulse-Width Modulation (PWM) Controller with Integrated High-Side Gate Drivers
|
Intersil Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
